氢气气氛中后续退火处理对ZnO:Al 薄膜光电性能的影响

doi:10.3969/j.issn.0253-2778.2010.07.007

中国科学技术大学学报 ›› 2010, Vol. 40 ›› Issue (7): 699-705.DOI: 10.3969/j.issn.0253-2778.2010.07.007

氢气气氛中后续退火处理对ZnO:Al 薄膜光电性能的影响

甘柳忠

中国科学技术大学合肥微尺度物质科学国家实验室，安徽合肥 230026

收稿日期:2009-05-26 修回日期:2009-10-21 出版日期:2010-07-31 发布日期:2010-07-31
通讯作者: 李明
作者简介:甘柳忠，男，1982年生，硕士. 研究方向：透明导电AZO膜的工艺研究. E-mail: ganlz@mail.ustc.edu.cn
基金资助:
国家自然科学基金（50772109）资助.

Effects of post-annealing in hydrogen atmosphere on the properties of Al-doped ZnO films

GAN Liuzhong

Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China

Received:2009-05-26 Revised:2009-10-21 Online:2010-07-31 Published:2010-07-31

摘要/Abstract

摘要： 利用自由基辅助磁控溅射法在载玻片衬底上制备了透明导电ZnO:Al薄膜(简称AZO薄膜).研究了氢气气氛中后续退火处理对Al掺杂效率以及AZO薄膜性能的影响.研究结果表明，退火处理提高Al的掺杂效率、降低中性杂质浓度，从而提高了AZO薄膜的导电性能.AZO薄膜550 ℃下在H2气氛中退火处理后，其电阻率为65×10-4 Ω·cm，550 nm波长的透射率为857%，载流子浓度为33×1020 cm-3，迁移率为297 cm2·V-1·s-1.

关键词: AZO薄膜, 自由基辅助磁控溅射, 中性杂质散射, 掺杂效率, 后退火处理

Abstract: Transparent conductive ZnO:Al (AZO) films were deposited on glass substrates by radical assisted magnetron sputtering. The effects of post-annealing in hydrogen atmosphere on the Al doping efficiency and properties of AZO films were investigated. It was found that post-annealing treatment improves the Al doping efficiency and reduces the concentration of neutral impurity scattering centers. These two factors together improve the conductivity of AZO films. The resistivity and the transmittance at 550 nm of the AZO films annealed in H2 at 550 ℃ were 65×10-4 Ω·cm and 857%, respectively, with carrier concentration being 33×1020 cm-3 and mobility of 297 cm2·V-1·s-1.

Key words: AZO films, radical assisted magnetron sputtering, neutral impurity scattering, doping efficiency, post-annealing treatment

甘柳忠，吴炳俊，黄烽，李明，谢斌. 氢气气氛中后续退火处理对ZnO:Al 薄膜光电性能的影响[J]. 中国科学技术大学学报, 2010, 40(7): 699-705.

GAN Liuzhong, WU Bingjun, Huang Feng, LI Ming, XIE Bin. Effects of post-annealing in hydrogen atmosphere on the properties of Al-doped ZnO films[J]. Journal of University of Science and Technology of China, 2010, 40(7): 699-705.

氢气气氛中后续退火处理对ZnO:Al 薄膜光电性能的影响

Effects of post-annealing in hydrogen atmosphere on the properties of Al-doped ZnO films

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