中国科学技术大学学报 ›› 2014, Vol. 44 ›› Issue (8): 667-671.DOI: 10.3969/j.issn.0253-2778.2014.08.006

• 原创论文 • 上一篇    下一篇

Ni1-xMnxO稀磁半导体的磁性研究

王 超   

  1. 中国科学技术大学国家同步辐射实验室,安徽合肥 230029
  • 收稿日期:2014-05-15 修回日期:2014-06-08 出版日期:2014-08-31 发布日期:2014-08-31
  • 通讯作者: 闫文盛
  • 作者简介:王超,男,1986年生,博士. 研究方向:凝聚态物理. E-mail: chaowng@mail.ustc.edu.cn
  • 基金资助:
    国家自然科学基金(U1332131)资助.

Magnetic properties of Ni1-xMnxO diluted magnetic semiconductor

WANG Chao   

  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
  • Received:2014-05-15 Revised:2014-06-08 Online:2014-08-31 Published:2014-08-31

摘要: 通过X射线吸收近边结构(XANES)、超导量子干涉仪和第一性原理计算研究了脉冲激光沉积法(PLD)制备的Ni1-xMnxO (001≤x≤005)薄膜的微观结构和磁学性质. X射线吸收近边结构表明,当x≤003时,掺杂的Mn替代了NiO晶格中的Ni原子,并且以混合价态(+2/+3)的形式存在.当x>003时,掺杂的部分Mn离子形成了类Mn2O3杂相.磁性测量表明,随着Mn含量从001增加到003,Ni1-xMnxO薄膜的饱和磁矩从03 μB/Mn增加到了045 μB/Mn.基于第一性原理计算,我们提出Mn3+离子之间通过Ni空位表现出了铁磁性耦合,Mn2+离子之间则通过超交换作用表现出了反铁磁耦合.

关键词: Mn掺杂NiO, XAFS, 室温铁磁性

Abstract: The microstructural and magnetic properties of Ni1-xMnxO (001≤x≤005) thin films prepared by pulsed laser deposition (PLD) were studied by combining X-ray absorption near edge structure (XANES) spectroscopy, superconducting quantum interference device (SQUID) and first-principles calculations. XANES results at Mn K-edge show that at the low Mn doping level of x≤003, the Mn ions in the mixed oxidation valence state (+2/+3) are incorporated substitutionally into the NiO host, while at higher doping level of x>003 Mn2O3-like impurity phase is formed. Magnetization measurements indicate that the saturation magnetic moment of Ni1-xMnxO film increases from 03 to 045 μB/Mn as the Mn content rises from 001 to 003. It is proposed that interactions between Mn3+ ions mediated by Ni vacancies exhibit ferromagnetic coupling, while interactions between Mn2+ ions exhibit antiferromagnetic coupling through superexchange interaction.

Key words: Mn-doped NiO, XAFS, room temperature ferromagnetism