硅基氧化钆薄膜的生长及结构

doi:10.3969/j.issn.0253-2778.2011.10.004

中国科学技术大学学报 ›› 2011, Vol. 41 ›› Issue (10): 867-871.DOI: 10.3969/j.issn.0253-2778.2011.10.004

硅基氧化钆薄膜的生长及结构

李亭亭

1.中国科学技术大学国家同步辐射实验室，安徽合肥 230029； 2.中国科学技术大学核科学与技术学院，安徽合肥 230029; 3.中国科学技术大学物理系，安徽合肥 230026

收稿日期:2010-01-24 修回日期:2010-05-05 出版日期:2011-10-31 发布日期:2011-10-31

Growth and characterization of Gd2O3 thin film on Si

LI Tingting

1.National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China; 2.School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China; 3.Department of Physics, University of Science and Technology of China, Hefei 230026, China

Received:2010-01-24 Revised:2010-05-05 Online:2011-10-31 Published:2011-10-31
Contact: QI Zeming
About author:LI Tingting, female, born in 1983, master. Research field: high-k gate dielectric film. E-mail: tingli@mail.ustc.edu.cn

摘要/Abstract

摘要： 采用脉冲激光沉积方法（PLD）在不同温度的Si(100)衬底上制备了Gd2O3栅介质薄膜，利用X射线衍射、X射线反射率以及光电子能谱等方法对它的结构、组成以及价带偏移等进行了研究.结果表明：衬底温度为300 ℃ 时，Gd2O3薄膜呈非晶态；当衬底温度为650 ℃时，形成单斜相的Gd2O3薄膜.XPS和XRR结果确定其界面主要是由于界面反应形成的钆硅酸盐.通过XPS分析得到Gd2O3与Si之间的价带偏移为(-2.28±0.1)eV.

关键词: Gd2O3薄膜, 激光脉冲沉积, 高介电常数

Abstract: Gd2O3 thin films were deposited on Si (100) substrates by pulsed laser deposition (PLD). The structure, composition and band offset were investigated by X-ray diffraction (XRD), X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The results show that, the Gd2O3 thin film is amorphous when growing at 300 ℃ and is crystallized into monoclinic structure at 650 ℃. The formation of Gd-silicate interfacial layer due to interface reaction is confirmed by XRR and XPS. The valence band offset (ΔEV) of (-228±01)eV is obtained by XPS.

Key words: Gd2O3 thin film, pulsed laser deposition, high gate dielectric constant

李亭亭，戚泽明，程学瑞，张文华，张国斌，周洪军，潘国强. 硅基氧化钆薄膜的生长及结构[J]. 中国科学技术大学学报, 2011, 41(10): 867-871.

LI Tingting, QI Zeming, CHENG Xuerui, ZHANG Wenhua, ZHANG Guobin, ZHOU Hongjun, PAN Guoqiang. Growth and characterization of Gd2O3 thin film on Si[J]. Journal of University of Science and Technology of China, 2011, 41(10): 867-871.

硅基氧化钆薄膜的生长及结构

Growth and characterization of Gd2O3 thin film on Si

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