Journal of University of Science and Technology of China ›› 2010, Vol. 40 ›› Issue (7): 699-705.DOI: 10.3969/j.issn.0253-2778.2010.07.007
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GAN Liuzhong
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Abstract: Transparent conductive ZnO:Al (AZO) films were deposited on glass substrates by radical assisted magnetron sputtering. The effects of post-annealing in hydrogen atmosphere on the Al doping efficiency and properties of AZO films were investigated. It was found that post-annealing treatment improves the Al doping efficiency and reduces the concentration of neutral impurity scattering centers. These two factors together improve the conductivity of AZO films. The resistivity and the transmittance at 550 nm of the AZO films annealed in H2 at 550 ℃ were 65×10-4 Ω·cm and 857%, respectively, with carrier concentration being 33×1020 cm-3 and mobility of 297 cm2·V-1·s-1.
Key words: AZO films, radical assisted magnetron sputtering, neutral impurity scattering, doping efficiency, post-annealing treatment
GAN Liuzhong, WU Bingjun, Huang Feng, LI Ming, XIE Bin. Effects of post-annealing in hydrogen atmosphere on the properties of Al-doped ZnO films[J]. Journal of University of Science and Technology of China, 2010, 40(7): 699-705.
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URL: http://just-cn.ustc.edu.cn/EN/10.3969/j.issn.0253-2778.2010.07.007
http://just-cn.ustc.edu.cn/EN/Y2010/V40/I7/699
