Growth and characterization of Gd2O3 thin film on Si

doi:10.3969/j.issn.0253-2778.2011.10.004

Journal of University of Science and Technology of China ›› 2011, Vol. 41 ›› Issue (10): 867-871.DOI: 10.3969/j.issn.0253-2778.2011.10.004

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Growth and characterization of Gd2O3 thin film on Si

LI Tingting

1.National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China; 2.School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China; 3.Department of Physics, University of Science and Technology of China, Hefei 230026, China

Received:2010-01-24 Revised:2010-05-05 Online:2011-10-31 Published:2011-10-31
Contact: QI Zeming
About author:LI Tingting, female, born in 1983, master. Research field: high-k gate dielectric film. E-mail: tingli@mail.ustc.edu.cn

Abstract

Abstract: Gd2O3 thin films were deposited on Si (100) substrates by pulsed laser deposition (PLD). The structure, composition and band offset were investigated by X-ray diffraction (XRD), X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The results show that, the Gd2O3 thin film is amorphous when growing at 300 ℃ and is crystallized into monoclinic structure at 650 ℃. The formation of Gd-silicate interfacial layer due to interface reaction is confirmed by XRR and XPS. The valence band offset (ΔEV) of (-228±01)eV is obtained by XPS.

Key words: Gd2O3 thin film, pulsed laser deposition, high gate dielectric constant

LI Tingting, QI Zeming, CHENG Xuerui, ZHANG Wenhua, ZHANG Guobin, ZHOU Hongjun, PAN Guoqiang. Growth and characterization of Gd2O3 thin film on Si[J]. Journal of University of Science and Technology of China, 2011, 41(10): 867-871.

Growth and characterization of Gd2O3 thin film on Si

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