中国科学技术大学学报 ›› 2010, Vol. 40 ›› Issue (4): 400-405.DOI: 10.3969/j.issn.0253-2778.2010.04.012

• 原创论文 • 上一篇    下一篇

利用溅射反转剥离工艺实现微放电器Ni电极图形化

张秋萍   

  1. 1.中国科学技术大学精密机械与精密仪器系,安徽合肥 230026; 2.安徽工程科技学院机械工程系,安徽芜湖 241000
  • 收稿日期:2009-04-28 修回日期:2009-09-14 出版日期:2010-04-30 发布日期:2010-04-30
  • 通讯作者: 文莉
  • 作者简介:张秋萍,女,1984年生,硕士. 研究方向:微小等离子体放电器制备. E-mail:gini@mail.ustc.edu.cn
  • 基金资助:
    国家自然科学基金(50605061)资助.

The patterning of microplasma reactor electrode using sputtering image reversal lift-off process

ZHANG Qiuping   

  1. 1.Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China,Hefei 230027,China; 2.Department of Mechanical Engineering, Anhui University of Technology and Science, Wuhu 241000,China
  • Received:2009-04-28 Revised:2009-09-14 Online:2010-04-30 Published:2010-04-30

摘要: 研究了实现微放电器Ni电极图形化的溅射反转剥离工艺,即采用磁控溅射沉积Ni薄膜,利用图像反转法实现金属剥离.以硅为基底分析了转型烘烤和显影等因素对AR-U4030光刻胶反转的作用,研究了Ni膜溅射功率、时间以及超声振洗等条件对剥离的影响.实验表明,剥离Ni膜厚度为200 nm时,图形精度可达2 μm.最后,利用溅射反转剥离工艺实现了倒金字塔深槽中金属的剥离,简化了微放电器Ni电极的图形化工艺,由此制备的微放电器在SF6等离子体中稳定放电.

关键词: 溅射, 图像反转, 剥离, 微小等离子体反应器

Abstract: The image reversal lift-off process, which is used to pattern the microplasma reactor electrode, is studied. Nickel film is deposited by sputtering and then formed on electrodes using lift-off process based on AR-U4030 photoresist. The effects of reversal bake and develop time on the pattern quality of the photoresist are analysed. Furthermore, the influence of the sputtering power, time and ultrasonic cleaning on the lift-off process are investigated. The thickness of Ni obtained here achieved more than 200 nm and the image resolution is higher than 2 μm.Finally, the inverted square pyramid microplasma reactor is fabricated using this lift-off process, and the electrical characteristic of the reactor operating stably in SF6 is presented.

Key words: sputtering, image reverse, lift-off, microplasma reactor